Abstract
AbstractWe have investigated structural, optical, and electrical properties of MgZnO:(Al/Ga) thin films in dependence on Mg and Al/Ga concentrations. For this purpose, thin films with two perpendicular, lateral composition gradients, i.e., the Mg composition is varied in one direction whereas the Al/Ga concentration is varied in a perpendicular direction were grown at by pulsed‐laser deposition (PLD) using a threefold segmented PLD target and 2‐inch in diameter c‐plane sapphire substrates. It has been found that compensation by intrinsic acceptors limits efficient doping to dopant concentrations of about . Further, the electrical data suggests, that the compensating defect is doubly chargeable hinting to the zinc vacancy as microscopic origin. Increasing the dopant concentration above leads to a degradation of electrical and structural properties.
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