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Abstract
Terahertz time domain spectroscopy (THz-TDS) has been used to investigate the effect of bismuth doping on the refractive index, absorption coefficient, dielectric constant, and the conductivity of TiO2. Simple effective-medium approximation along with THz-TDS has been utilized for the extraction of these parameters from the composite samples. These values are increasing with dopant concentration. Moreover, the fitting of conductivity with Drude-smith model revealed that the charge carriers are localized and back scattering is the major conductivity mechanism.
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