Doping effects on diffusion and diffusion mechanisms in Ge and Si

Abstract

Abstract Available results of the doping effects on self-and impurity-diffusion in Ge and Si are analysed quantitatively, showing that self-interstitials responsible for high temperature diffusion in Si are amphoteric with an acceptor level above the middle of the band gap and a donor level below the middle of the band gap. In Ge the vacancies are responsible for the diffusion mechanisms and have an acceptor level near the edge of the valence band. Approximate values for the donor and acceptor levels of the defects in Ge and Si are also given.