Abstract
The doping effect on the optical, electro-optic, and photoconductive properties of Czochralski-grown Bi12MO20 (M = Ge, Si, Ti) sillenite-structure single crystals was studied. The dopants were introduced into the growth charge in the form of oxides. Bi12TiO20 crystals were doped with V, Zn, Cu, P, and Nb; and Bi12SiO20 crystals were doped with Cd and Mo. The results indicate that the doping level has a significant effect on the photoconductivity of the Bi12TiO20〈Zn〉, Bi12TiO20〈Cu〉, Bi12SiO20〈Cd〉, and Bi12SiO20〈Bi24CdMoO40〉 crystals, which may exceed that of undoped crystals at low doping levels and may be substantially lower than it, down to zero, at increased dopant concentrations. Niobium doping of bismuth titanate has no effect on its photosensitivity and electro-optic properties. Phosphorus and vanadium enhance the photosensitivity of bismuth titanate over the entire composition range studied but have little effect on its electro-optic coefficient r41. A slight increase in r41 was only observed at high vanadium concentrations. The axial impurity distribution in the crystals is shown to be nonuniform, which reflects in their photoresponse: the photoconductivity of the copper-doped crystals near the seed end is 3 times that near the tail end.
Published Version
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