Abstract
Silicene has been recently synthesized in the form of nanoribbons on the anisotropic Ag (110) surface. The effects of disorder on silicene nanoribbons are expected to exhibit remarkable properties in the form of nanostructures. It has been found that the electronic structures of the doped zigzag silicene nanoribbons (ZSiNRs) are different from those of pristine ZSiNRs. In this paper, we study the spin dependent electron conductance of ZSiNRs substitutionally doped with Boron/Nitrogen (B/N) atoms by using Green's Function method based on Tight Binding approximation and Landauer-Buttiker formalism. B/N atoms place on different sites of ZSiNRs from edge to center. The B/N atoms have influence on spin dependent transport. Also, conductance varies with the position of B/N atoms. Our findings are comparable with recent DFT calculations. These doping effects can be used to design novel spintronic devices.
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