Abstract
The temperature-dependent Hall coefficient and electrical resistivity above 77 K of Ga- and In-doped LiAl are presented. "Positive" Hall coefficients were observed in doped LiAl as well as for pure LiAl. Following Zunger, we propose that the conduction-band---valence-band overlap varies as the lattice parameter. The conduction mechanisms are discussed in terms of one- and two-carrier models, respectively, for Ga-doped LiAl and In-doped LiAl.
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