Abstract
In current trending photonic and optoelectronic devices the KH2PO4 (KDP) crystal seek prime importance hence in present communication we explore the decisive impact of Ni2+ on linear-nonlinear optical, dielectric and microhardness properties of KDP crystal. The Ni2+ doped KDP bulk single crystal has been successfully grown by slow solvent evaporation technique. The doping of Ni in crystal matrix of KDP has been determined by means of energy dispersive spectroscopic analysis. The powder X-ray diffraction technique has been employed to evaluate the crystalline phase and structural parameters of grown crystal. The influence of Ni2+ on linear optical transmittance of KDP crystal has been comparatively examined within 200–1100 nm by means of UV–vis analysis. The pure and Ni2+ doped KDP crystal has been subjected to Kurtz-Perry test and the remarkably enhanced SHG efficiency of Ni2+ doped KDP crystal is found to be 3.89 times higher than KDP crystal. The frequency response of dielectric constant and dielectric loss of undoped and Ni2+ doped KDP crystal has been evaluated within 50 Hz to 1 MHz. The constructive impact of Ni2+ on microhardness properties of KDP crystal has been confirmed by means of Vickers microhardness analysis.
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