Abstract
Interlayer coupling in graphene-based van der Waals (vdW) heterostructures plays a key role in determining and modulating their physical properties. Hence, its influence on the optical and electronic properties cannot be overlooked in order to promote various next-generation applications in electronic and opto-electronic devices based on the low-dimensional materials. Herein, the optical and electrical properties of the vertically stacked large area heterostructure of the monolayer graphene transferred onto a monolayer graphene oxide film are investigated. An effective and stable p-doping property of this structure is shown by comparison to that of the graphene device fabricated on a silicon oxide substrate. Through Raman spectroscopy and density functional theory calculations of the charge transport characteristics, it is found that graphene is affected by sustainable p-doping effects induced from underneath graphene oxide even though they have weak interlayer interactions. This finding can facilitate the development of various fascinating graphene-based heterostructures and extend their practical applications in integrated devices with advanced functionalities.
Highlights
Interlayer coupling in graphene-based van der Waals heterostructures plays a key role in determining and modulating their physical properties
Using chemical vapor deposition (CVD) grown monolayer graphene and graphene oxide (GO) prepared via photochemical treatment, graphene/ GO heterostructure was obtained by transferring graphene onto GO13–15
Because the electrical properties of CVD graphene can be modified by charged impurities or chemical components dispersed on the GO surface as well as the substrate, UV-irradiation technique is employed in this study to obtain a clean GO surface (Supplementary information, Fig. S2), which is comparable to that obtained by other methods, as we reported in our previous work[19]
Summary
Interlayer coupling in graphene-based van der Waals (vdW) heterostructures plays a key role in determining and modulating their physical properties. Through Raman spectroscopy and density functional theory calculations of the charge transport characteristics, it is found that graphene is affected by sustainable p-doping effects induced from underneath graphene oxide even though they have weak interlayer interactions This finding can facilitate the development of various fascinating graphene-based heterostructures and extend their practical applications in integrated devices with advanced functionalities. The interlayer coupling effect on the electrical charge transport and Raman spectroscopy measurements is investigated in vertically stacked graphene on GO films. The experimental strategies employed in this study can be utilized to reveal the physical origins of graphene doping effects in vdW hetero structures and for designing new 2D vdW structures for applications in various conceptual electronic systems as well as their optimization for use in electrical and optical components
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