Abstract
The photoluminescence of n-type InP crystals shifts in energy as the excitation intensity is increased. This shift is towards lower luminescence photon energies for sufficiently low doping levels. However, for electron concentrations above 10 18 cm -3 the luminescence line shifts towards higher energies. We interpret the latter effect by filling of the InP conduction band states. Excitons are absent in the highly doped crystals because of electron-screening. The shift in the low-doping régime is ascribed to exciton-exciton interactions.
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