Abstract
The doping control of GaPN grown by organometallic vapor-phase epitaxy was investigated. The carrier concentration of p-GaPN could be regulated by C self-doping generated from organometallic sources. The carrier concentration of C-doped p-GaPN was controlled by [TBP]/[TEGa] ratio and decreased with increasing N-content due to the formation of acceptor–H complexes. The carrier concentration of S-doped n-GaPN could be controlled by [H 2S]/[TBP]. The doping efficiency of the GaPN was decreased to 1 10 as compared with GaP. The ideality factor and series resistance in GaPN pn-junction light-emitting diode on Si were estimated as 7.3 and 17.5 Ω, respectively. We consider that the large ideality factor result from the valence band offset at p-Si/p-GaPN interface. In the light output-current characteristic of the LED, the light output increased nonlinearly in the current range below 10 mA. This indicates that GaPN layers are affected by non-radiative recombination centers.
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