Abstract

We studied the resistivity, photosensitivity, photoluminescence, and surface photovoltage of CdTe crystals doped with Ge or Sn to extend our knowledge of the influence of the deep-donor level on compensation and afterglow effects. We demonstrated a strong correlation between photosensitivity caused by photoelectrons with Fermi-level variations near the GeCd0/2+ or SnCd0/2+ energy levels. Surface photovoltage measurements confirmed that when the concentration of residual acceptors varied along the direction of growth, then trapping conditions dramatically changed as a defect was converted from a neutral state to doubly charged positive one.

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