Abstract
The effects of doping and pressure on the U 3Sb 4Pt 3 system have been studied. Substitution of either trivalent yttrium or lutetium for uranium causes significant changes in the temperature dependences of the electrical resistance and of the magnitude of the linear coefficient of the specific heat γ. However, substitution of tetravalent thorium causes little change in γ, even though it affects the electrical resistance in a manner similar to that seen in the cases of lutetium and yttrium. Finally, application of hydrostatic pressures up to 16.5 kbar causes no significant change in the electronic gap deduced from the electrical resistance.
Highlights
Recent work on the cubic CeaBi4Pta system [1 ] has shown that it appears to be a semiconducting mixed valence system with an energy gap of approximately 50 K in its electronic spectrum
The effect of substitutions and pressure on the properties of U3Sb4Pt3 are similar to those found in the cerium analogue, but because the uranium system supports a wider variety of dopants, we are able to extend our knowledge of these gapped systems
Pure UsSb4Pt3 single crystals and crystals doped with tetravalent thorium and trivalent lutetium and yttrium were grown from an antimony flux*
Summary
Recent work on the cubic CeaBi4Pta system [1 ] has shown that it appears to be a semiconducting mixed valence system with an energy gap of approximately 50 K in its electronic spectrum. The U3Sb4Pta system is isostructural with CeaBi4Pt3 and has a gap of roughly 200 K. This system has been reported by Takabatake et al [6, 7] and Takegahara et al [8] in its pure form as part of a larger study of the UaSb4T3 (T---Ni, Cu, Pd, Pt, Au) systems, but a detailed investigation of the stability of the gap with respect to substitutions and pressure was not made. The effect of substitutions and pressure on the properties of U3Sb4Pt3 are similar to those found in the cerium analogue, but because the uranium system supports a wider variety of dopants, we are able to extend our knowledge of these gapped systems
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