Doping and precoating by Cu-metal and annealing impacts on some physical properties and applications of MnS thin films

Abstract

We prepared thin films of manganese sulfide (MnS) using a thermal evaporation technique. These films were pre-coated and doped with Cu ((MnS)1-xCux, x = 0.05 g). A lot of work was done on these films using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), UV/VIS/NIR spectrophotometry, and a two-probe approach to figure out their structure, shape, optical properties, and electrical properties. We investigated various factors including the optical energy gap (Eg), refractive index (n), extinction coefficient (k), Urbach energy (Eu), dielectric constants (εr), dispersion parameters, activation energy (ΔE), mobility, photocatalytic analysis, and Seebeck coefficient. The XRD analysis showed that the thin films were amorphous. The direct optical energy gaps of the pure, Cu pre-coated layer, and Cu-doped MnS films were measured at 3.17 eV, 1.88 eV, and 2.45 eV, respectively. Annealing the films at different temperatures showed normal refractive index dispersion in the NIR region. The addition of copper, both as a pre-coating layer and as doping, resulted in a decrease in film resistivity, indicating their semiconducting nature. FE-SEM analysis provided valuable insights into the morphology of the thin films, revealing a uniform and smooth surface. The electrical characteristics showed that film resistivity decreased with copper addition, confirming enhanced conductivity. These properties hold significance in the development of absorber layers for second-generation solar cells, thermoelectric characteristics, and photocatalysis applications.