Abstract
We report the use of a simple close-spaced vapor transport technique for the growth of high-quality epitaxial GaAs films using potentially inexpensive GaAs powders as precursors.
Highlights
GaAs is interesting for photovoltaic (PV) applications due to its high carrier mobilities, large optical absorption coefficient a(l), and direct band gap of Eg 1⁄4 1.42 eV
GaAs and related III–V semiconductors are used in the highest-efficiency single- and multi-junction photovoltaics, but the technology is too expensive for non-concentrated terrestrial applications
This is due in part to the difficulty of scaling the metal–organic chemical vapor deposition (MOCVD) process, which relies on expensive reactors and employs toxic and pyrophoric gas-phase precursors such as arsine and trimethyl gallium, respectively
Summary
GaAs is interesting for photovoltaic (PV) applications due to its high carrier mobilities, large optical absorption coefficient a(l), and direct band gap of Eg 1⁄4 1.42 eV. Title: Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics We report the use of a simple, atmospheric-pressure, vapor-transport technique for the growth of high-quality epitaxial GaAs films with controlled doping using inexpensive GaAs powders as precursors.
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