Abstract
In this work the addition of Ag to p type CdTe is systematically studied by electrical characterisation combined with controlled ionimplantation. In one set of experiments radioactive Cd isotopes were implanted, acting during annealing as host atoms, but later transmuting according to the nuclear decay series into Ag acceptors. In this way a doping efficiency close to 100% is obtained. Furthermore Ag ions were implanted into the back side of CdTe wafers to investigate in situ the compensation process. The decrease in free hole density is caused by the formation of complexes involving acceptor impurities and interstitial Ag atoms.
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