Doping And Annealing Effect On Evaporation Of ZnO Thin Films

Abstract

The present study carried out to show the structure and optical properties of doped ZnO:Sn thin films that have been deposition on a glass substrate by thermal evaporation (using Zn metal). The percentage of dopant is (3, 5, 7, & 9)%. The annealing temperature was 200 oC fixed for one hour annealing time. The result of XRD shows the presence of (100), (002) and (101) are the diffraction peaks of all thin films. The crystalline size was found to be increased with Sn doping. The FWHM values of the peaks were found to increase with doping. The direct optical band gap was calculated and found to be (3.24, 3.21, 3.2, 2.72, 2.88) e.V for pure and doped thin films respectively.