Doped Self-Aligned Metallization for Solar Cells

Abstract

Metal contacts using doped self-aligning metallization to [100] and [111] p-type silicon were investigated. Contacts formed in this manner allow the formation of a pn-junction and provide front metallization for photovoltaic applications. Formulated screen-printable thick films were annealed above Ag/Si eutectic temperature of 830 °C. The annealing process resulted in a junction depth of 0.3–1.1 μm with improved Ag/Si metal contacts due to the reduction of parasitic native oxide layer via the use of a wetting agent. The technique inhibits shunts (high conductivity paths through the solar cell pn-junction caused by excessive metal penetration) due to limited solubility of Ag in Si. The technique also reduces series resistance (a parasitic resistance due to surface states that also limit solar cell performance) due to a robust thermal processing window. The use of magnesium (Mg) as a wetting agent in the thick film Ag matrix was explored. We observed a correlation between increased wetting and improved dark saturation current J02 in the absence of a pre-existing junction.