Abstract
A depletion-mode doped-channel field effect transistor (DCFET) using an AlAs/sub 0.56/Sb/sub 0.44//In/sub 0.53/Ga/sub 0.47/As heterostructure with multiple channels and a gate-length of 1.0 /spl mu/m is presented. The device structure is grown by molecular beam epitaxy and consists of three doped In/sub 0.53/Ga/sub 0.47/As channels separated by undoped AlAs/sub 0.56/Sb/sub 0.44/ layers. A zero gate-bias saturation current density of 350 mA/mm, extrinsic transconductance as high as 250 mS/mm, a unity current gain cutoff frequency of 18 GHz, and a maximum oscillation frequency of 60 GHz are reported. This multiple channel approach results in wide linearity of the DC and RF performances of the device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
