Abstract
Poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is less selective for holes in an inverted‐architecture organic photovoltaic (OPV) than it is in a conventional‐architecture OPV device due to differences between the interfacial‐PSS concentration at the top and bottom of the PEDOT:PSS layer. In this work, thin layers of polysulfonic acids are inserted between the poly(3‐hexylthiophene) (P3HT):indene‐C60 bisadduct (ICBA) bulk heterojunction (BHJ) active layer and PEDOT:PSS to create a higher concentration of acid at this interface and, therefore, mimic the distribution of materials present in a conventional device. Upon thermal annealing, this acid layer oxidizes P3HT, creating a thin p‐type interlayer of P3HT+/acid− on top of the BHJ. Using X‐ray absorption spectroscopy, Kelvin probe, and ellipsometry measurements, this P3HT+/acid− layer is shown to be insoluble in water, indicating it remains intact during the subsequent deposition of PEDOT:PSS. Current density–voltage measurements show this doped interlayer reduces injected dark current while increasing both open‐circuit voltage and fill factor through the creation of a more hole selective BHJ‐PEDOT:PSS interface.
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