Abstract
Dopant-segregated Schottky (DSS) junctions are formed by implant-to-silicide (ITS) processing with NiSi. It is shown that a fluorine pre-silicidation ion implant (F-PSII) can be used to reduce the depth of the doped Si region. This provides a new means for engineering the source/drain extension regions in DSS source/drain MOSFETs for performance optimization. It is also shown that there are two distinct regions of diffusion that can result in a kink in the dopant profile for long post-ITS anneals. F-PSII also reduces DSS diode leakage by reducing the extent of Ni diffusion into Si, which reduces the concentration of generation-recombination centers. Finally, F-PSII reduces the electron Schottky barrier height (SBH) in DSS junctions despite a reduction in interfacial dopant concentration apparently due to the reduction in Ni spatial distribution. The majority-carrier SBH is found to be zero or near-zero for DSS junctions formed by ITS processing, with or without F-PSII.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
