Abstract
Variation of the effective distribution coefficient keff with the current density J in electroepitaxy of semiconductor compounds is analyzed, taking into account the thickness L of the solution. On the basis of the analytical expression for (keff−k0)/k0 derived in this paper, where k0 is the interface distribution coefficient, both the changes in dopant concentration with J and the homogeneous distribution of dopants parallel to the growth direction are explained. It is shown that in electroepitaxy from a limited solution volume (L≲0.1 cm) the difference between keff and k0 is negligible even when J becomes very high. Thus, we can carry out direct measurements of k0 vs J in order to conduct a quantitative study of dopant incorporation mechanisms.
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