Abstract
AbstractX-ray absorption spectroscopy has been applied to layered Zn-doped InP structures containing systematically varying amounts of Zn spanning a factor of -40. The structures, similar to those used in optoelectronic laser devices, were characterized with x-ray absorption spectroscopy and SIMS to determine quantitatively the Zn concentrations. In addition to being non-destructive, the former technique was shown to be substantially more precise. A well-defined concentration regime is established in which substitutionally occupied Zn is directly proportional to Zn exposure during growth.
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