Abstract
Lateral p-n junctions have been demonstrated in the low pressure metalorganic vapor phase epitaxial growth of AlGaAs structures on nonplanar GaAs substrates. It is shown that the final distribution of dopant atoms is governed by the dopant migration over the structured surface evolving during the growth. This result has allowed the single-step growth of index-guided lasers with a built-in lateral current confinement scheme.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.