Abstract
Abstract The submerged heater method of crystal growth is simulated and the influence of steady and oscillatory rotation of crucible and/or heater on dopant distribution in crystals is investigated. Initial boundary value problem for the system of Navier-Stokes-Boussinesq equations is solved by the finite element method using the code ASTRA. The calculated history of dopant concentration at the solid-liquid interface is used to determine the dopant distribution in the grown crystals.
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