Abstract
In this paper, we discuss the impact of germanium and carbon on the diffusion of common dopants in Si-based alloys. We review results of various diffusion experiments and discuss the basic physical mechanisms of the observed changes of diffusion coefficients as a function of alloy composition. Results of boron and phosphorus marker layer diffusion experiments are presented for binary Si1-xGex and Si1-yCy and ternary Si1-x-yGexCy alloys.
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