Abstract
Electrical-assisted diffusion of carriers had been proposed as a new hypothesis of a major dopant deactivation kinetics. New metrology methods, including SIMS/ARXPS and CAOT/DHE methods, are used for this study and supply supporting evidences and data. N-type (P- and As-based) implants show more serious deactivation, but similar reactivation to P-type (B-based) implants, which can be interpreted by the electrical-assisted diffusion mechanism. In this paper, dopant deactivation and reactivation of advanced doping techniques including both n-type doping by As beam-line (BL) implant and p-type doping by molecular BF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> BL implant and B <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> plasma doping (PLAD) are studied and demonstrated.
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