Dopant and thickness dependence of metal-induced lateral crystallization of amorphous silicon films

Abstract

The thickness and dopant dependence of nickel-based, metal-induced laterally crystallized (MILC) polycrystalline silicon has been systematically studied. With decreasing thickness of the starting amorphous silicon films, the MILC rate decreases and the crystal morphology deteriorates with an increasing number of nickel silicide nodules trapped in the MILC region. Doping with phosphorus or arsenic and damage introduced during ion implantation are found to slow down the MILC rate and to degrade the film morphology, whereas heavy doping with boron is found to speed up the MILC rate. Possible mechanisms responsible for the observed dependence are discussed.