Year-end Sale % OFF 
Abstract
The influence of channel doping on the threshold voltage of polycrystalline silicon thin-film transistors (TFTs) has been investigated using both boron and phosphorus implants. For each dopant type, asymmetric TFT behavior was seen between enhancement and depletion mode TFTs, with the enhancement mode TFTs always showing a greater shift in threshold voltage for a given dose. From a detailed analysis of the boron-doped samples, using a two-dimensional device simulator, it was demonstrated that the results could be best explained in terms of an asymmetric density of states, in which the deep trapping state density in the lower half of the band gap increased with increasing boron concentration, and the effect of the dopant on threshold voltage was itself determined by this local defect concentration.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
