Abstract
Supersaturated solid solutions of substitutional, electrically active Sb have been obtained by ion implantation of relaxed epitaxial Si1−xGex alloy layers grown on compositionally graded buffers. Substitutional and nonsubstitutional Sb fractions in relaxed Si0.85Ge0.15, Si0.65Ge0.35 and Si0.50Ge0.50 alloy layers implanted to a dose of 5×1015 Sb cm−2 and annealed isothermally at temperatures ranging from 400 to 850°C have been studied by Rutherford backscattering/channeling, transmission electron microscopy and Hall-effect and sheet resistivity measurements. A supersaturated solution of Sb corresponding to a peak carrier concentration of 4×1020 cm−3 and an electrically active fraction of 40% of the implanted dose is observed by Hall measurements for the case of Si0.85Ge0.15 and Si0.65Ge0.35 alloys annealed at 550°C.
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