Abstract
A deep level in S-doped Ga0.52In0.48P grown on GaAs by chloride vapor-phase epitaxy was studied by deep-level transient spectroscopy (DLTS). The deep level concentration obtained by DLTS is increased with donor doping intensity as also the case for the obtained by persistent photoconductivity. The energy of this level strongly depends on thermal and optical ionization processes. These properties are the same as those of the DX center. However, the deep level concentration is considerably smaller than that in AlxGa1-xAs(0.3<x<0.7), which makes Ga0.52In0.48P favorable for heterostructure electron devices.
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