Abstract
ZnO-based varistors containing 0-10 000 ppm Ga were prepared bythe mixed oxide route. Disc-shaped samples were sintered in airat 1030 °C for 2 h. All products were of high density(>94% theoretical). Gallium addition led to a reduction ingrain size from 12 µm to approximately 8 µm. FromI-V characteristics the non-linear coefficients (α)were determined to be ~38. The doped varistors exhibiteddonor-like behaviour for Ga contents up to 1500 ppm Ga andacceptor-like behaviour at higher levels. Above the 1500 ppmtransition doping level, the leakage current density decreasedand breakdown fields were consistently high.
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