Abstract
Hall effect and conductivity measurements are performed on Te-doped silicon in the temperature range 30K≦T≦800K. A Hall equipment suited for high temperatures up to 800 K has been constructed. The temperature dependence of the free electron concentration is analyzed for Te-doped silicon including one double-donor and several monovalent donor species. A deep level with an electrical activation energy of 200 meV is determined from the saturation of the free electron concentration at temperatures above 400 K. This level represents the first ionization stage of the Te double-donor. The second ionization stage is estimated to have an activation energy of 440 meV. The maximum electrically active Te concentration obtained is 5×1016cm−3. Three different shallow donor states are resolved in the low-temperature range. The concentrations of these shallow donors are partially sensitive to a subsequent heat-treatment.
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