Donor-related defect states in ZnO substrate material

Abstract

State-of-the-art commercial ZnO substrate materials grown either by chemical vapor transport or by a hydrothermal technique are investigated by photoluminescence. We identify all the sharp lines around 3.36eV as donor bound exciton (D0,X) lines, based on their associated two-electron satellites (TES). Study of the TES transitions yields information on the donor specific 1s↔2p single-particle binding energy of each donor, which allows us to determine the donor binding energies and the correlation to the exciton binding energies, i.e. Haynes’ rule.