Donor Reactivation Kinetics and Hydrogen Redistribution in the Space Charge Layer of N-Type Silicon

Abstract

ABSTRACTThe passivation and reactivation of As donor dopants in n-type Si was studied with both monatomic hydrogen and deuterium. Hydrogenated Schottky diodes were characterized with C-V and DLTS measurements. The reactivation kinetics of the As-H and As-D complexes were studied in the space-charge layer of reverse biased diodes in the temperature range from 60°C to 120°C. These bias-anneals yield dissociation time constants for As-H, from which an averaged activation energy of 1.17±0.1 eV was determined. Although the dissociation of the As-H complex is appreciably slower than that previously measured for P-H, the activation energy is within about 0.05 eV of that determined previously for the P-H complex (1.2 eV). The depth redistribution of the As-H complexes after bias-annealing agrees with the previous conclusion that hydrogen can assume a negative charge state in n-type Si.