Abstract
The generation of donor-like interface traps under room temperature bias stress is observed. This generation process is insensitive to the gate polarity, hot carrier stress, and positive charge formation in the gate oxide. It requires the simultaneous presence of boron- and water-related species. The generated interface traps are nonuniformly distributed along the channel.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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