Abstract
A variational method is used to investigate the ground state of an electron bound to a donor impurity near a single semiconductor heterointerface by considering the influence of a realistic heterojunction potential and the screened Coulombic impurity potential. The screening effect is considered within the random phase approximation. A one subband model is adopted to describe the behavior of the conduction electrons in the potential. The impurity state binding energy is obtained numerically for the GaAs/Al x Ga 1− x As (0.2< x<0.4) system. It is found that the screening effect dramatically decreases the impurity state binding energy which is influenced obviously by the barrier potential and the conduction band bending. The binding energy obtained versus Al concentration, electron density, and impurity position is given and discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
