Abstract
AbstractUsing a variational procedure within the effective mass approximation, the mixing between the Γ and X conduction band valleys in GaAs‐Ga1–x Alx As quantum wells is investigated by taking into account the effect of applied hydrostatic pressure. Some optical properties such as donor and/or acceptor binding energy and impurity‐related transition energies are calculated and comparisons with available experimental data are presented. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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