Abstract
Based on the effective-mass approximation, the binding energy of a donor impurity in zinc-blende (ZB) InGaN/GaN asymmetric multiple quantum wells (AMQWs) is investigated variationally. Numerical results show that the ground-state donor binding energy is highly dependent on the impurity positions and the AMQWs structure parameters. The donor binding energy has a maximum value and the impurity position of the maximum value is localized inside the wide well of the AMQWs. Moreover, the variation of any well width of the AMQWs has a remarkable influence on the donor binding energy. In particular, for the impurity localized inside the wide well, the donor binding energy is insensitive to the increment of the inter-well barrier width when the inter-well barrier width is large.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
