Abstract
We report identification, by a spectroscopic method, of shallow donors in both epitaxial and bulk gallium arsenide. Identification is achieved using photoluminescence from resonantly excited two-electron satellites of donor bound exciton lines at 4.2 K in a magnetic field of 9.5 T. Sulfur and a previously unreported lower binding energy donor dominate in liquid-encapsulated Czochralski-grown crystals, while S and Si are dominant in the Bridgman-grown material. Central cell structure is resolved in the (D0,X) lines in a high magnetic field.
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