Abstract
The donor-cation vacancy complex in Si-doped AlGaAs grown by metalorganic chemical vapor deposition has been identified by examining the growth-condition dependence of photoluminescence (PL) spectra. It has been revealed that the complex has the same origin as the self-activated center in GaAs, and is relevant to the degradation of crystal quality for high doping and high V/III ratio conditions. The excitation intensity dependence of PL spectra, and the fact that the emission is not observed for the samples with indirect gaps, suggest that the emission is a band-to-acceptor transition. The temperature dependence of the emission intensity and linewidth are compared with GaAs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
