Abstract
The electrical activity of Ga impurities in a high concentration range in B and P highly compensated Si co-doped with Ga for photovoltaic applications has been investigated through the analysis of donor-acceptor pair luminescence. We have identified the fine structure due to the pair luminescence between P-donors and Ga-acceptors based on a comparison with a theoretical spectrum using their generally accepted ionization energies in low concentration ranges in uncompensated Si. The fine structure showed no dependence on dopant concentrations in the P and Ga concentration ranges from 7 × 1016 to 4 × 1017 cm−3 and from 5 × 1016 to 3 × 1017 cm−3, respectively, which leads us to suggest that both P and Ga impurities act as isolated donors and acceptors without noticeable reduction of ionization energies due to high doping.
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