Abstract
We present new photoluminescence (PL) data of deliberately O-doped and Mg-doped GaN layers grown by MOCVD. The combination of these data with positron annihilation spectroscopy (PAS) and SIMS results obtained on the same samples shows a clear correlation of the PL intensity of the acceptor related emissions at 3.466 and 3.27 eV (at 2 K) with O doping. The acceptor is stable upon annealing in N 2 in our highly resistive samples, while it is known be unstable in p-GaN. Our tentative conclusion is that this very commonly occurring acceptor is either a V Ga–O–H complex or a second configuration of the Mg acceptor containing H.
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