Dominant conduction mechanism and the effects of device temperature on electrical characteristics of Al/ZnPc/n-Si structures

Abstract

Aluminum/Zinc Phthalocyanine/n-Si metal semiconductor contact with organic interfacial layer has been developed and characterized by Current–Voltage–Temperature ( I– V– T) measurements for the study of its junction and charge transport properties. The junction parameters, such as diode ideality factor ( n), barrier height ( φ b) and series resistance ( R S), of the device were found to shift with device temperature. The diode ideality factor was found to increase with the device temperature up to 323 K. However, a decreasing trend in the value of n was observed beyond this temperature. The barrier height and series resistance were found to increase and decrease, respectively with increasing device temperature. The peak of interface state energy distribution curves was shifted, in terms of Ess-Ev value, from 0.622 eV to 0.827 eV with 52 meV activation energy of the charge carriers. The data analysis implies that the Fermi level of the organic interfacial layer shifts as function of device temperature. In terms of dominant conduction mechanism, the I– V– T data analysis confirms the relationship log ( IV 4) ∝ V 1/2 with the device temperature in the range of 313–343 K and the Poole–Frenkel type is found to be the dominant conduction mechanism for the hybrid device.