Abstract
Scanning electron microscopy was used to study the mobility of domain walls in vapor-transport equilibrated stoichiometric LiTaO3. By using low-acceleration voltage, switching occurs solely for polarization pointing up domains, resulting in fast domain-wall motion. When the incoming electron beam was more energetic with larger penetration depth, the switching instead occurred for polarization pointing down domains. Our results are discussed in terms of the interaction of the scanning electron beam with the polarization-screening charges at the crystal surface.
Highlights
For our experiments, we used in-house electric-field poled vapor-transport equilibrated stoichiometric LiTaO3 (VTESLT) samples with dimensions 6 Â 11 Â 1 mm3 along the x, y, and z crystallographic axes, respectively
Scanning electron microscopy was used to study the mobility of domain walls in vapor-transport equilibrated stoichiometric LiTaO3
When the incoming electron beam was more energetic with larger penetration depth, the switching instead occurred for polarization pointing down domains
Summary
We used in-house electric-field poled VTESLT samples with dimensions 6 Â 11 Â 1 mm3 along the x, y, and z crystallographic axes, respectively. By using low-acceleration voltage, switching occurs solely for polarization pointing up domains, resulting in fast domain-wall motion. When the incoming electron beam was more energetic with larger penetration depth, the switching instead occurred for polarization pointing down domains.
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