Abstract

This study investigates nanostrips in Co/Cu/Py spin valve structures by connecting one side to domain wall reservoirs of different shapes in order to manipulate the switching field. The switching field increases according to the injection geometry; a diamond-shape reservior generates the largest switching field, followed by square-shape and then tip shape reservoirs. Simulation indicated the same results, showing that the vortex domain walls nucleated at the junction, but the pinning force increased as the magnetic transition area became larger (the injection angle became smaller). Therefore, by controlling the domain wall injection angles, the switching fields of the nanostrips can be manipulated.

Highlights

  • The manipulation of magnetization reversal processes in various submicron or nanometer configurations is important for future applications in spin electronic devices or ultrahigh density recording media

  • Magnetization reversal by an electric current is essential for future magnetic data storage technology, such as spin–orbit torque (SOT) magnetic random-access memories (MRAM)

  • The magnetization reversal process is revealed by the giant magnetoresistance (GMR) effect

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Summary

Introduction

The manipulation of magnetization reversal processes in various submicron or nanometer configurations is important for future applications in spin electronic devices or ultrahigh density recording media. The domain wall (DW) has been widely studied in novel magnetic devices, especially racetrack memory [1,2] or spinwave (SW) propagation, has become a significant study area [3,4,5,6]. It has been demonstrated that a switching field and magnetization reversal can be manipulated by the motion of domain walls of different geometric shapes [7,8,9,10]. Researchers used a nanostrip, with or without square pad structures, to measure the resistance under an external magnetic field.

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