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Abstract
The effects of electrical field and mechanical stress on domain wall motion have been quantitatively determined for gadolinium molybdate (GMO) and similar compounds. The ratio of the stress driven wall mobility μτ to the electrical field driven wall mobility μE is shown to be equal to the ratio of the spontaneous strain γ0 to the spontaneous polarization P0 and to have the numerical value 1.53×104 cm2/C. The dynamics of domain wall motion in GMO are discussed in relation to the crystal structure of this material.
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