Abstract
Low-energy ion implantation is used to form a single-layer exchanged biased FeRh film. Neutron scattering measurements confirm the presence of pinned uncompensated moments and magnetic domains consistent with a domain state exchange bias system.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
