Abstract
Stationary and moving domains similar to those found by Böer and coworkers on CdS have been observed on ZnS single crystals by the help of the Franz-Keldish effect. The development of the stationary high-field domains was found to be strongly influenced by structural defects and in many cases the domains appeared to be bound to these defects. In this case the position of the high-field domain depends on the polarity of the applied voltage. Luminescence field quenching and electroabsorption show weak correlation. Different types of moving domains have been observed: an anode-to-cathode and two types of cathode-to-anode moving domains, showing different irradiation and voltage dependence. Moving domains can be quenched by infrared irradiation. The current waveform changes with ultraviolet intensity and wavelength as well as the field strength.
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