Abstract
Domain structures of Fe-Si-B-Nb amorphous wires with a large diameter were investigated. A 10% increase of pulse output voltage due to large Barkhausen jumps in the Fe-Si-B-Nb wire at the diameter of 200 µm has been obtained which is less than expected due to decreased saturation and small domain size. Domain observation results indicate that the increase of the domain size in the inner core of the wire is important for high sensor output.
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