Abstract
Wide band gap MgxZn1-xO alloy films were grown on LaAlO3(100) (LAO) substrates by pulsed laser deposition. Structural characterization by X-ray and electron diffraction reveals a single cubic phase of c-MgxZn1-xO (c-MZO) with composition x>0.6 and heteroepitaxial relationships of (100)c-MZO $\parallel$ (100)LAO (out-of-plane) and (011)c-MZO $\parallel$ (010)LAO (in-plane). The strain relaxation is analyzed in detail under the framework of domain matching epitaxy. The sequence of 5/4, 4/3 domains observed departs from the ideal 1:4 ratio, indicating a complex strain relaxation mechanism.
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